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Influence of molecule dwell time on μc-Si:H propertiesCOSCIA, U; AMBROSONE, G; MADDALENA, P et al.Thin solid films. 2002, Vol 403-04, pp 130-134, issn 0040-6090Conference Paper

Pulsed laser deposition of II-VI and III-V semiconductor materialsMELE, A; DI PALMA, T. M; FLAMINI, C et al.La Chimica e l'industria (Milano). 1998, Vol 80, Num 10, pp 1323-1332, issn 0009-4315Article

Thermoluminescent response of thin (2 μm) polycrystalline diamond films grown by pulsed and continuous microwave plasmasCICALA, G; BRESCIA, R; NITTI, M. A et al.Diamond and related materials. 2010, Vol 19, Num 5-6, pp 470-473, issn 0925-9635, 4 p.Conference Paper

Study of the interface in n⁺μc-si/p-type c-Si heterojunctions: role of the fluorine chemistry in the interface passivationLOSURDO, M; GRIMALDI, A; SACCHETTI, A et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 171-175, issn 0040-6090, 5 p.Conference Paper

A study of remote plasma nitrided nGaAs/Au Schottky barrierAMBRICO, M; LOSURDO, M; CAPEZZUTO, P et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 413-419, issn 0038-1101, 7 p.Article

Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation techniquePERNA, G; CAPOZZI, V; MINAFRA, A et al.The European physical journal. B, Condensed matter physics. 2003, Vol 32, Num 3, pp 339-344, issn 1434-6028, 6 p.Article

Optical characterization of CdS_xSe_1-x films grown on quartz substrate by pulsed laser ablation techniquePERNA, G; PAGLIARA, S; CAPOZZI, V et al.Thin solid films. 1999, Vol 349, Num 1-2, pp 220-224, issn 0040-6090Article

Temperature-dependent absorption edge and photoconductivity of Tl₂In₂S₃Se layered single crystalsGULER, I; AMBRICO, M; LIGONZO, T et al.Journal of alloys and compounds. 2013, Vol 550, pp 471-474, issn 0925-8388, 4 p.Article

X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser depositionERLACHER, A; AMBRICO, M; CAPOZZI, V et al.Semiconductor science and technology. 2004, Vol 19, Num 11, pp 1322-1324, issn 0268-1242, 3 p.Article

Structural and optical characterization of Zn doped CdSe filmsPERNA, G; CAPOZZI, V; AMBRICO, M et al.Applied surface science. 2004, Vol 233, Num 1-4, pp 366-372, issn 0169-4332, 7 p.Article

Optical and electrical characterization of n-GaAs surfaces passivated by N₂-H₂ plasmaAUGELLI, V; LIGONZO, T; MINAFRA, A et al.Journal of luminescence. 2003, Vol 102-03, pp 519-524, issn 0022-2313, 6 p.Conference Paper

Temperature dependence of the red shift and broadening of the exciton line in CdSe/GaAs laser ablated heterostructuresPERNA, G; CAPOZZI, V; AMBRICO, M et al.Journal of luminescence. 1998, Vol 76-77, pp 534-539, issn 0022-2313Conference Paper